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BLF4G22-100; BLF4G22S-100
UHF power LDMOS transistor
Rev. 01 -- 10 January 2006 Product data sheet
1. Product profile
1.1 General description
100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Table 1: Typical performance Tcase = 25 C; in a common source class-AB test circuit; IDq = 900 mA; typical values Mode of operation f (MHz) 2-carrier W-CDMA [1]
[1]
VDS (V) 28
PL (W)
Gp (dB)
D (%) 26
IMD3 (dBc) -37
ACPR (dBc) -41
f1 = 2135; f2 = 2145
25 (AV) 13.5
10 MHz carrier spacing PAR 7 dB at 0.01 % probability on CCDF, 3GPP test model 1, 1 to 64 DPCH.
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features
s Typical 2-Carrier W-CDMA performance at a supply voltage of 28 V and an IDq of 900 mA: x Load power = 25 W (AV) x Gain = 13.5 dB (typ) x Efficiency = 26 % (typ) x ACPR = -41 dBc (typ) x IMD3 = -37 dBc (typ) s Easy power control s Integrated ESD protection s Excellent ruggedness > 10 : 1 VSWR at 100 W CW s High efficiency s High peak power capability (> 150 W) s Excellent thermal stability s Designed for broadband operation (2000 MHz to 2200 MHz) s Internally matched for ease of use
Philips Semiconductors
BLF4G22-100; BLF4G22S-100
UHF power LDMOS transistor
1.3 Applications
s RF power amplifiers for W-CDMA base stations and multicarrier applications in the 2000 MHz to 2200 MHz frequency range.
2. Pinning information
Table 2: Pin 1 2 3 Pinning Description drain gate source
[1]
Simplified outline
Symbol
BLF4G22-100 (SOT502A)
1 3 2 2 3
sym039
1
BLF4G22S-100 (SOT502B) 1 2 3 drain gate source
[1]
1 3 2 2
1
3
sym039
[1]
Connected to flange
3. Ordering information
Table 3: Ordering information Package Name BLF4G22-100 BLF4G22S-100 Description flanged LDMOST ceramic package; 2 mounting holes; 2 leads earless flanged LDMOST ceramic package; 2 leads Version SOT502A SOT502B Type number
4. Limiting values
Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions Min -0.5 -65 Max 65 +15 12 +150 200 Unit V V A C C
9397 750 14338
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 10 January 2006
2 of 14
Philips Semiconductors
BLF4G22-100; BLF4G22S-100
UHF power LDMOS transistor
5. Thermal characteristics
Table 5: Symbol Rth(j-case) Thermal characteristics Parameter thermal resistance from junction to case Conditions Tcase = 80 C; PL = 25 W; 2-carrier W-CDMA Min Typ 0.76 Max 0.85 Unit K/W
6. Characteristics
Table 6: Characteristics Tj = 25 C unless otherwise specified. Symbol Parameter VGS(th) VGSq IDSS IDSX IGSS gfs RDS(on) Crs gate-source threshold voltage gate-source quiescent voltage drain leakage current drain cut-off current gate leakage current transfer conductance Conditions VDS = 10 V; ID = 180 mA VDS = 28 V; ID = 900 mA VGS = 0 V; VDS = 28 V VGS = VGS(th) + 6 V; VDS = 10 V VGS = 15 V; VDS = 0 V VDS = 10 V; ID = 10 A Min 65 2.5 2.7 27 Typ 3.1 3.2 30 9.0 0.09 2.5 Max 3.5 3.7 3 300 Unit V V V A A nA S pF V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.9 mA
drain-source on-state resistance VGS = VGS(th) + 6 V; ID = 6 A feedback capacitance VGS = 0 V; VDS = 28 V; f = 1 MHz
7. Application information
Table 7: Application information Mode of operation: 2-Carrier W-CDMA, PAR 7 dB at 0.01 % probability on CCDF, 3GPP test model 1, 1-64 DPCH, f1 = 2112.5 MHz, f2 = 2122.5 MHz, f3 = 2157.5 MHz, f4 = 2167.5 MHz. Symbol Gp IRL D IMD3 ACPR Parameter power gain input return loss drain efficiency adjacent channel power ratio Conditions PL(AV) = 25 W PL(AV) = 25 W PL(AV) = 25 W PL(AV) = 25 W Min 12.5 9 24 Typ 13.5 15 26 -37 -41 Max -35 -39 Unit dB dB % dBc dBc
third order intermodulation distortion PL(AV) = 25 W
7.1 Ruggedness in class-AB operation
The BLF4G22-100/BLF4G22S-100 are capable of withstanding a load mismatch corresponding to VSWR > 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 900 mA; PL = 100 W (CW).
9397 750 14338
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 10 January 2006
3 of 14
Philips Semiconductors
BLF4G22-100; BLF4G22S-100
UHF power LDMOS transistor
40 D (%) Gp (dB) 30
001aac270
-15 ACPR, IMD3 (dBc) -25
D
IMD3
20
ACPR -35
Gp 10
-45
0 0 10 20 30
-55 40 50 PL(AV) (W)
(1) 2-carrier W-CDMA performance; VDS = 28 V, IDq = 900 mA; f1 = 2135 MHz and f2 = 2145 MHz; PAR = 7 dB at 0.01 % on CCDF; 3GPP TM1, 64 DPCH.
Fig 1. 2-carrier W-CDMA ACPR, IMD3, power gain and drain efficiency as functions of average load power; typical values Table 8: Typical impedance values VDS = 28 V; IDq = 900 mA; PL = 25 W (AV); Tcase = 25 C. Frequency (MHz) 2110 2140 2170 Table 9: Code [1] A B C D E
[1] [2]
ZS () 2.2 + j4.8 2.2 + j4.6 2.2 + j4.5 RF gain grouping Gain (dB) [2] Min 12.5 13.0 13.5 14.0 14.5
ZL () 1.5 - j2.6 1.5 - j2.4 1.4 - j2.2
Max 13.0 13.5 14.0 14.5 -
0.2 dB overlap is allowed for measurement reproducibility. For 2-carrier W-CDMA at f1 = 2157 MHz, f2 = 2167.5 MHz.
9397 750 14338
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 10 January 2006
4 of 14
Philips Semiconductors
BLF4G22-100; BLF4G22S-100
UHF power LDMOS transistor
16 Gp (dB) 14
001aac271
-20 IMD3 (dBc)
001aac272
(1) (2) (3) (4)
-30
(5) (1)
-40
(4) (5)
-50
(2)
12 -60
(3)
10 1 10
102 PL(PEP) (W)
103
-70 1 10
102 PL(PEP) (W)
103
(1) IDq = 600 mA (2) IDq = 750 mA (3) IDq = 900 mA (4) IDq = 1050 mA (5) IDq = 1200 mA Two-tone measurement; VDS = 28 V; f1 = 2140.0 MHz; f2 = 2140.1 MHz
(1) IDq = 600 mA (2) IDq = 750 mA (3) IDq = 900 mA (4) IDq = 1050 mA (5) IDq = 1200 mA Two-tone measurement; VDS = 28 V; f1 = 2140.0 MHz; f2 = 2140.1 MHz
Fig 2. Power gain as a function of peak envelope load power; typical values
001aac273
Fig 3. Third order intermodulation distortion as a function of peak envelope power; typical values
1011 t50% (hr) 1010
001aac274
16 Gp (dB) 14
109
P1dB = 135 W (= 52.1 dBm) 12 P3dB = 161 W (= 51.3 dBm)
108
107
10 0 40 80 120 160 200 PL (W)
106 100
140
180
220 Tj (C)
260
ton = 8 s toff = 1 ms
Fig 4. Pulsed peak power capability; typical values
Fig 5. t50% failures due to electromigration as a function of junction temperature
9397 750 14338
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 10 January 2006
5 of 14
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Product data sheet Rev. 01 -- 10 January 2006
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved. 9397 750 14338
8. Test information
Philips Semiconductors
C1 C12 C13
VG
R1
VD
C11 C2
C14 C3 C4 L7 L14 C5 C6 C8 C9 C10 C15
BLF4G22-100; BLF4G22S-100
L6
DUT
C7 L1 L2 L3 L4 L5 L8 L10 C16 L11 L12 L13
L9
UHF power LDMOS transistor
001aac275
See Table 10 for list of components
6 of 14
Fig 6. Test circuit for operation at 2.14 GHz
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Product data sheet Rev. 01 -- 10 January 2006
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved. 9397 750 14338
Philips Semiconductors
50 mm C1 C13
VG
R1
C12
C11 C2
C3 C5 75 mm
C4
L7 L14 C8 C9 C10 C6 L6
C14 C15
BLF4G22-100; BLF4G22S-100
C7 L1 L2 L3 L4 L5 L8 L9 L10
C16 L11
L12
L13
UHF power LDMOS transistor
001aac276
The components are situated on double copper-clad Taconic RF35 Printed-Circuit Board (PCB) (r = 3.5); thickness = 0.76 mm. The other side is unetched and serves as a ground plane. See Table 10 for list of components.
7 of 14
Fig 7. Component layout for 2.14 GHz test circuit
Philips Semiconductors
BLF4G22-100; BLF4G22S-100
UHF power LDMOS transistor
List of components (see Figure 6 and Figure 7 ) Description tantalum capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor electrolytic capacitor tantalum capacitor multilayer ceramic chip capacitor stripline stripline stripline stripline stripline stripline stripline stripline stripline stripline stripline stripline stripline stripline SMD resistor
[3] [4] [4] [4] [4] [4] [4] [4] [4] [4] [4] [4] [4] [4] [4] [2] [1] [1]
Table 10:
Component C1, C2, C11 C3 C4, C10 C5, C8, C14, C15 C6 C7 C9 C12 C13 C16 L1 L2 L3 L4 L5 L6 L7 L8 L9 L10 L11 L12 L13 L14 R1
[1] [2] [3] [4]
Value 10 F; 35 V 4.7 F; 25 V 8.2 pF 1.5 F; 50 V 0.6 pF 4.7 pF 220 nF; 50 V 220 F; 63 V 4.7 F; 50 V 7.5 pF Z0 = 50 Z0 = 50 Z0 = 24 Z0 = 15 Z0 = 9.5 Z0 = 60 Z0 = 60 Z0 = 8.2 Z0 = 5.5 Z0 = 50 Z0 = 50 Z0 = 34 Z0 = 50 Z0 = 43 4.7 ; 0.1 W
Dimensions
(W x L) 32.3 mm x 1.7 mm (W x L) 2.2 mm x 1.7 mm (W x L) 2.3 mm x 4.8 mm (W x L) 2.4 mm x 8 mm (W x L) 9.3 mm x 14 mm (W x L) 4 mm x 1.2 mm (W x L) 14.5 mm x 1.2 mm (W x L) 9.3 mm x 16.8 mm (W x L) 3 mm x 25.8 mm (W x L) 11 mm x 1.7 mm (W x L) 9.5 mm x 1.7 mm (W x L) 3 mm x 3 mm (W x L) 12.7 mm x 1.7 mm (W x L) 13.5 mm x 2.1 mm
American Technical Ceramics type 100B or capacitor of same quality. American Technical Ceramics type 100A or capacitor of same quality. American Technical Ceramics type 180R or capacitor of same quality. Striplines are on a double copper-clad Taconic RF35 PCB (r = 3.5); thickness = 0.76 mm.
9397 750 14338
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 10 January 2006
8 of 14
Philips Semiconductors
BLF4G22-100; BLF4G22S-100
UHF power LDMOS transistor
9. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A
D
A
3
D1
F
U1 q C
B c
1
L
H
U2
p w1 M A M B M
E1
E
A
2
b w2 M C M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.72 3.43 0.186 0.135 b 12.83 12.57 c 0.15 0.08 D D1 E 9.50 9.30 E1 9.53 9.25 F 1.14 0.89 H 19.94 18.92 L 5.33 4.32 p 3.38 3.12 Q 1.70 1.45 q 27.94 U1 34.16 33.91 1.345 1.335 U2 9.91 9.65 0.390 0.380 w1 0.25 0.01 w2 0.51 0.02
20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774
0.505 0.006 0.495 0.003
0.374 0.375 0.366 0.364
0.045 0.785 0.035 0.745
0.210 0.133 0.170 0.123
0.067 1.100 0.057
OUTLINE VERSION SOT502A
REFERENCES IEC JEDEC JEITA
EUROPEAN PROJECTION
ISSUE DATE 99-12-28 03-01-10
Fig 8. Package outline SOT502A
9397 750 14338 (c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 10 January 2006
9 of 14
Philips Semiconductors
BLF4G22-100; BLF4G22S-100
UHF power LDMOS transistor
Earless flanged LDMOST ceramic package; 2 leads
SOT502B
D
A F
3
D1 D
U1
c
L
1
H
U2
E1
E
2
b w2 M D M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.72 3.43 0.186 0.135 b 12.83 12.57 c 0.15 0.08 D D1 E 9.50 9.30 E1 9.53 9.25 F 1.14 0.89 H 19.94 18.92 L 5.33 4.32 0.210 0.170 Q 1.70 1.45 U1 20.70 20.45 U2 9.91 9.65 w2 0.25
20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774
0.505 0.006 0.495 0.003
0.374 0.375 0.366 0.364
0.045 0.785 0.035 0.745
0.067 0.815 0.057 0.805
0.390 0.010 0.380
OUTLINE VERSION SOT502B
REFERENCES IEC JEDEC JEITA
EUROPEAN PROJECTION
ISSUE DATE 99-12-28 03-01-10
Fig 9. Package outline SOT502B
9397 750 14338 (c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 10 January 2006
10 of 14
Philips Semiconductors
BLF4G22-100; BLF4G22S-100
UHF power LDMOS transistor
10. Abbreviations
Table 11: Acronym 3GPP CW CCDF DPCH IDq LDMOS PAR PEP RF TM1 VSWR W-CDMA Abbreviations Description Third Generation Partnership Project Continuous Wave Complementary Cumulative Distribution Function Dedicated Physical Channels quiescent drain current Laterally Diffused Metal Oxide Semiconductor Peak-to-Average Ratio Peak Envelope Power Radio Frequency Test Model 1 Voltage Standing Wave Ratio Wideband Code Division Multiple Access
9397 750 14338
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 10 January 2006
11 of 14
Philips Semiconductors
BLF4G22-100; BLF4G22S-100
UHF power LDMOS transistor
11. Revision history
Table 12: Revision history Release date Data sheet status Product data sheet Change notice Doc. number 9397 750 14338 Supersedes Document ID
BLF4G22-100_4G22 20060110 S-100_1
9397 750 14338
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 10 January 2006
12 of 14
Philips Semiconductors
BLF4G22-100; BLF4G22S-100
UHF power LDMOS transistor
12. Data sheet status
Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
III
Product data
Production
[1] [2] [3]
Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
13. Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
15. Trademarks
Notice -- All referenced brands, product names, service names and trademarks are the property of their respective owners.
14. Disclaimers
Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors
16. Contact information
For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
9397 750 14338
(c) Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 -- 10 January 2006
13 of 14
Philips Semiconductors
BLF4G22-100; BLF4G22S-100
UHF power LDMOS transistor
17. Contents
1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 8 9 10 11 12 13 14 15 16 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information . . . . . . . . . . . . . . . . . . . . 13
(c) Koninklijke Philips Electronics N.V. 2006
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 10 January 2006 Document number: 9397 750 14338
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